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Abstract Silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of driving voltage (V_pp), which is limited by both material properties and device structures. Here, we present a metal-oxide-semiconductor capacitor microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) with a strong plasma dispersion effect. The device is co-fabricated by Intel’s photonics fab and our in-house TCO patterning processes, which exhibits a high modulation efficiency of 117 pm/V and consequently can be driven by a very low V_ppof 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the RC bandwidth, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit. 

We report photon pairs and heralded single photons generated at 1310 nm wavelengths using silicon photonics technology, demonstrating that comparable performance could be achieved when a silicon microring resonator was pumped either by a desktop laser instrument or by an electrically injected, room-temperature hybrid silicon laser. Measurements showed that 130 kilo-coincidence-counts per second pair rates could be generated, with coincidences-to-accidentals ratio approximately 100 at about 0.34 mW optical pump power and anti-bunching upon heralding with second-order intensity correlation g(2)(0) = 0.06 at about 0.9 mW optical pump power. These results suggest that hybrid silicon lasers, which are ultra-compact and wafer-scale manufacturable, could be used in place of packaged, stand-alone lasers for generating photon pairs at data communication wavelengths and enable large-scale, cost-effective manufacturing of integrated sources for quantum communications and computing.